CASIA OpenIR  > 国家专用集成电路设计工程技术研究中心
Collection of charge in NMOS from single event effect
Wang, Jingqiu1,2; Lin, Fujiang1; Wang, Donglin2; Song, Wenna2; Liu, Li2; Song, Qiwei2; Chen, Liang2
Source PublicationIEICE ELECTRONICS EXPRESS
2016-04-25
Volume13Issue:8Pages:1-8
SubtypeArticle
AbstractIn aerospace environment, single event effect (SEE) will occur and single event transient (SET) current pulse will be induced in drain/source region of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) when high energy ion strikes semiconductor devices. The typical double exponential transient current model proposed for traditional technology is not suitable for ultra deep sub-micron technology devices. In this paper, a novel multi-dimensional double exponential transient current model is proposed based on our new understanding of ultra deep sub-micron radiation mechanism, which has been validated using Technology Computer Aided Design (TCAD) simulation. This model can be important basis for the searching of SEE at circuit level and can be transparently applied to evaluate the effectiveness and performance of hardening technique, thus shortening the developing cycle of integrated circuit intended to operate within aerospace environment.
KeywordSingle Event Effect Ultra Deep Sub-micron Double Exponential Transient Current Model Multi-dimensional
WOS HeadingsScience & Technology ; Technology
DOI10.1587/elex.13.20160014
Indexed BySCI
Language英语
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000377764100004
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ia.ac.cn/handle/173211/12046
Collection国家专用集成电路设计工程技术研究中心
Affiliation1.Univ Sci & Technol China, Sch Informat Sci & Technol, Hefei 230026, Peoples R China
2.Chinese Acad Sci, Inst Automat, Natl ASIC Design Engn Ctr, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Wang, Jingqiu,Lin, Fujiang,Wang, Donglin,et al. Collection of charge in NMOS from single event effect[J]. IEICE ELECTRONICS EXPRESS,2016,13(8):1-8.
APA Wang, Jingqiu.,Lin, Fujiang.,Wang, Donglin.,Song, Wenna.,Liu, Li.,...&Chen, Liang.(2016).Collection of charge in NMOS from single event effect.IEICE ELECTRONICS EXPRESS,13(8),1-8.
MLA Wang, Jingqiu,et al."Collection of charge in NMOS from single event effect".IEICE ELECTRONICS EXPRESS 13.8(2016):1-8.
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