Collection of charge in NMOS from single event effect
Wang, Jingqiu1,2; Lin, Fujiang1; Wang, Donglin2; Song, Wenna2; Liu, Li2; Song, Qiwei2; Chen, Liang2
2016-04-25
发表期刊IEICE ELECTRONICS EXPRESS
卷号13期号:8页码:1-8
文章类型Article
摘要In aerospace environment, single event effect (SEE) will occur and single event transient (SET) current pulse will be induced in drain/source region of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) when high energy ion strikes semiconductor devices. The typical double exponential transient current model proposed for traditional technology is not suitable for ultra deep sub-micron technology devices. In this paper, a novel multi-dimensional double exponential transient current model is proposed based on our new understanding of ultra deep sub-micron radiation mechanism, which has been validated using Technology Computer Aided Design (TCAD) simulation. This model can be important basis for the searching of SEE at circuit level and can be transparently applied to evaluate the effectiveness and performance of hardening technique, thus shortening the developing cycle of integrated circuit intended to operate within aerospace environment.
关键词Single Event Effect Ultra Deep Sub-micron Double Exponential Transient Current Model Multi-dimensional
WOS标题词Science & Technology ; Technology
DOI10.1587/elex.13.20160014
收录类别SCI
语种英语
WOS研究方向Engineering
WOS类目Engineering, Electrical & Electronic
WOS记录号WOS:000377764100004
引用统计
文献类型期刊论文
条目标识符http://ir.ia.ac.cn/handle/173211/12046
专题国家专用集成电路设计工程技术研究中心
作者单位1.Univ Sci & Technol China, Sch Informat Sci & Technol, Hefei 230026, Peoples R China
2.Chinese Acad Sci, Inst Automat, Natl ASIC Design Engn Ctr, Beijing 100190, Peoples R China
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GB/T 7714
Wang, Jingqiu,Lin, Fujiang,Wang, Donglin,et al. Collection of charge in NMOS from single event effect[J]. IEICE ELECTRONICS EXPRESS,2016,13(8):1-8.
APA Wang, Jingqiu.,Lin, Fujiang.,Wang, Donglin.,Song, Wenna.,Liu, Li.,...&Chen, Liang.(2016).Collection of charge in NMOS from single event effect.IEICE ELECTRONICS EXPRESS,13(8),1-8.
MLA Wang, Jingqiu,et al."Collection of charge in NMOS from single event effect".IEICE ELECTRONICS EXPRESS 13.8(2016):1-8.
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