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A common-gate boots trapped CMOS rectifier for VHF isolated DC-DC converter
Dongfang Pan1; Feng Zhang2; Lu Huang1; Jinliang Li2
Source PublicationJournal of Semiconductors
2017-05
Volume38Issue:5Pages:055002-1-055002-5
AbstractA common-gate boot strapped CMOS rectifier dedicated for VHF (very high frequency) isolated DC –DC converter is proposed . It uses common-gate bootstrapped technique to compensate the power loss due to the threshold voltage, and to solve the reflux problem in the conventional rectifier circuit . As a result , it improves the power conversion efficiency (PCE) and voltage conversion ratio (VCR). The design saves almost 90% of the area compared to apreviously reported double capacitor structure . In addition, we compare the previous rectifier with the proposed common-gate bootstrapped rectifier in the case of the same area; simulation results show that the PCE and VCR of the proposed structure  are superior to other structures. The proposed common-gate bootstapped rectifier was fabricated by using CSMC 0.5 μm BCD process .The measured maximum PCE is 86% and VCR achieves 77% at the operatingfrequency of 20 MHz. The average PCE  is about 79% and average VCR achieves 71 % in the frequency range of 30- 70 MHz . Measured PCE and VCR have been improved compared to previous results .
KeywordCmos Rectifier Circuit Bootstrapped Technique Very High Frequency Pce Isolated Dc –Dc
Document Type期刊论文
Identifierhttp://ir.ia.ac.cn/handle/173211/15349
Collection国家专用集成电路设计工程技术研究中心
Affiliation1.中国科学技术大学
2.中国科学院自动化研究所
Recommended Citation
GB/T 7714
Dongfang Pan,Feng Zhang,Lu Huang,et al. A common-gate boots trapped CMOS rectifier for VHF isolated DC-DC converter[J]. Journal of Semiconductors,2017,38(5):055002-1-055002-5.
APA Dongfang Pan,Feng Zhang,Lu Huang,&Jinliang Li.(2017).A common-gate boots trapped CMOS rectifier for VHF isolated DC-DC converter.Journal of Semiconductors,38(5),055002-1-055002-5.
MLA Dongfang Pan,et al."A common-gate boots trapped CMOS rectifier for VHF isolated DC-DC converter".Journal of Semiconductors 38.5(2017):055002-1-055002-5.
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