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Large-area and highly uniform carbon nanotube film for high-performance thin film transistors
Dong, Guodong1,2; Zhao, Jie1,2; Shen, Lijun3,4; Xia, Jiye1,2; Meng, Hu5; Yu, Wenhuan3,4; Huang, Qi1,2; Han, Hua3,4; Liang, Xuelei1,2; Peng, Lianmao1,2; Lijun Shen, Xuelei Liang
2018-08-01
发表期刊NANO RESEARCH
卷号11期号:8页码:4356-4367
文章类型Article
摘要Carbon nanotube thin film transistors (CNT-TFTs) are a potential TFT technology for future high-performance macroelectronics. Practical application of CNT-TFTs requires the production of large-area, highly uniform, density-controllable, repeatable, and high-throughput CNT thin films. In this study, CNT films were fabricated on 4-inch Si wafers and 2.5th generation (G2.5) backplane glasses (370 mm x 470 mm) by dip coating using a chloroform-dispersed high-purity semiconducting CNT solution. The CNT density was controlled by the solution concentration and coating times, but was almost independent of the substrate lifting speed (1-450 mm.min(-1)), which enables high-throughput CNT thin film production. We developed an image processing software to efficiently characterize the density and uniformity of the large-area CNT films. Using the software, we confirmed that the CNT films are highly uniform with coefficients of variance (C-v) < 10% on 4-inch Si wafers and similar to 13.8% on G2.5 backplane glasses. High-performance CNT-TFTs with a mobility of 45-55 cm(2).V-1.s(-1) were obtained using the fabricated CNT films with a high-performance uniformity (C-v approximate to 11%-13%) on a 4-inch wafer. To our knowledge, this is the first fabrication and detailed characterization of such large-area, high-purity, semiconducting CNT films for TFT applications, which is a significant step toward manufacturing CNT-TFTs.
关键词Carbon Nanotube Thin Film Large Area Uniform Transistor
WOS标题词Science & Technology ; Physical Sciences ; Technology
DOI10.1007/s12274-018-2025-9
关键词[WOS]FIELD-EFFECT TRANSISTORS ; SCALE INTEGRATED-CIRCUITS ; DIP-COATING METHOD ; HIGH ON/OFF RATIO ; LIGHT ; MACROELECTRONICS ; NETWORKS ; FABRICATION ; DISPLAYS ; CONTACT
收录类别SCI
语种英语
项目资助者National Key Research and Development Program(2016YFA0201902) ; National Natural Science Foundation of China(61621061) ; Beijing Municipal Science & Technology Commission(Z171100002017001 ; Chinese Academy of Science(YZ201671) ; Z161100000216146)
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000440733100035
引用统计
文献类型期刊论文
条目标识符http://ir.ia.ac.cn/handle/173211/21784
专题类脑智能研究中心
通讯作者Lijun Shen, Xuelei Liang
作者单位1.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China
2.Peking Univ, Dept Elect, Beijing 100871, Peoples R China
3.Chinese Acad Sci, Inst Automat, Beijing 100190, Peoples R China
4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
5.BOE Technol Grp Co Ltd, Beijing 100176, Peoples R China
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GB/T 7714
Dong, Guodong,Zhao, Jie,Shen, Lijun,et al. Large-area and highly uniform carbon nanotube film for high-performance thin film transistors[J]. NANO RESEARCH,2018,11(8):4356-4367.
APA Dong, Guodong.,Zhao, Jie.,Shen, Lijun.,Xia, Jiye.,Meng, Hu.,...&Lijun Shen, Xuelei Liang.(2018).Large-area and highly uniform carbon nanotube film for high-performance thin film transistors.NANO RESEARCH,11(8),4356-4367.
MLA Dong, Guodong,et al."Large-area and highly uniform carbon nanotube film for high-performance thin film transistors".NANO RESEARCH 11.8(2018):4356-4367.
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