A 2.5 ppm/degrees C Voltage Reference Combining Traditional BGR and ZTC MOSFET High-Order Curvature Compensation

doi:10.1109/TCSII.2020.3027768

	A 2.5 ppm/degrees C Voltage Reference Combining Traditional BGR and ZTC MOSFET High-Order Curvature Compensation
	Liu, Xifeng 1; Liang, Shan2 ; Liu, Wenju2 ; Sun, Ping 1
发表期刊	IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
ISSN	1549-7747
	2021-04-01
卷号	68 期号:4 页码:1093-1097
通讯作者	Liu, Xifeng(7239600@qq.com) ; Liang, Shan(sliang@nlpr.ia.ac.cn)
摘要	This brief presents a voltage reference with high-order curvature compensation based on the zero temperature coefficient (ZTC) of MOSFET. The proposed voltage reference uses a conventional current reference to generate a constant current as of the bias of ZTCMOS. A curvature compensation method based on the alpha power model is combined with the conventional curvature compensation method to obtain a low temperature coefficient. Test results of the proposed voltage reference fabricated with the CSMC 0.18 mu m CMOS process demonstrate that the output voltage is 628mV. The trimmed temperature coefficient achieves 2.5 ppm/degrees C. The line sensitivity is 0.03 %/V, the chip area is 0.024 mm(2), power consumption is 77 mu W. The simulated power supply rejection ratio (PSRR) reaches -91.4 dB at 100 MHz.
关键词	Voltage reference ZTC curvature compensation a power model CMOS process PSRR
DOI	10.1109/TCSII.2020.3027768
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[61971419] ; Jiangsu Natural Science Foundation Youth Fund Project[BK20150123]
项目资助者	National Natural Science Foundation of China ; Jiangsu Natural Science Foundation Youth Fund Project
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000634501300007
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
七大方向——子方向分类	语音识别与合成
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ia.ac.cn/handle/173211/44210
专题	多模态人工智能系统全国重点实验室_智能交互
通讯作者	Liu, Xifeng; Liang, Shan
作者单位	1.Jiangsu Coll Informat Technol, Sch Elect & Informat Engn, Jiangsu Key Lab ASIC Design, Wuxi 214153, Jiangsu, Peoples R China 2.Chinese Acad Sci, Inst Automat, Beijing 100192, Peoples R China
通讯作者单位	中国科学院自动化研究所
推荐引用方式 GB/T 7714	Liu, Xifeng,Liang, Shan,Liu, Wenju,et al. A 2.5 ppm/degrees C Voltage Reference Combining Traditional BGR and ZTC MOSFET High-Order Curvature Compensation[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS,2021,68(4):1093-1097.
APA	Liu, Xifeng,Liang, Shan,Liu, Wenju,&Sun, Ping.(2021).A 2.5 ppm/degrees C Voltage Reference Combining Traditional BGR and ZTC MOSFET High-Order Curvature Compensation.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS,68(4),1093-1097.
MLA	Liu, Xifeng,et al."A 2.5 ppm/degrees C Voltage Reference Combining Traditional BGR and ZTC MOSFET High-Order Curvature Compensation".IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS 68.4(2021):1093-1097.