Including the Effects of Process-Related Variability on Radiation Response in Advanced Foundry Process Design Kits
Li, Yanfeng1; Rezzak, Nadia2; Zhang, En Xia2; Schrimpf, Ronald D.2; Fleetwood, Daniel M.2; Wang, Jingqiu3; Wang, Donglin3; Wu, Yanjun1; Cai, Shuang1
2010-12-01
发表期刊IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷号57期号:6页码:3570-3574
文章类型Article
摘要Space applications using advanced foundry processes require device models that accurately include the dependence of total-ionizing dose (TID) response on process variability and layout. An automated flow is described for TID-aware process design kit generation using new test chips, modeling, and simulation. The variability of TID-induced leakage current and transistor mismatch both increase after irradiation.
关键词Mismatch Process Design Kit Process Variability Radiation Effects Stress Tid
WOS标题词Science & Technology ; Technology
关键词[WOS]TRANSISTORS
收录类别SCI
语种英语
WOS研究方向Engineering ; Nuclear Science & Technology
WOS类目Engineering, Electrical & Electronic ; Nuclear Science & Technology
WOS记录号WOS:000285355200082
引用统计
被引频次:5[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ia.ac.cn/handle/173211/9719
专题国家专用集成电路设计工程技术研究中心
作者单位1.Accelicon Technol Inc, Cupertino, CA 95014 USA
2.Vanderbilt Univ, Elect Engn & Comp Sci Dept, Nashville, TN 37235 USA
3.Chinese Acad Sci, Inst Automat, Beijing 100190, Peoples R China
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Li, Yanfeng,Rezzak, Nadia,Zhang, En Xia,et al. Including the Effects of Process-Related Variability on Radiation Response in Advanced Foundry Process Design Kits[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2010,57(6):3570-3574.
APA Li, Yanfeng.,Rezzak, Nadia.,Zhang, En Xia.,Schrimpf, Ronald D..,Fleetwood, Daniel M..,...&Cai, Shuang.(2010).Including the Effects of Process-Related Variability on Radiation Response in Advanced Foundry Process Design Kits.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,57(6),3570-3574.
MLA Li, Yanfeng,et al."Including the Effects of Process-Related Variability on Radiation Response in Advanced Foundry Process Design Kits".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 57.6(2010):3570-3574.
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