Collection of charge in NMOS from single event effect

doi:10.1587/elex.13.20160014

	Collection of charge in NMOS from single event effect
	Wang, Jingqiu1,2 ; Lin, Fujiang 1; Wang, Donglin2 ; Song, Wenna2 ; Liu, Li2 ; Song, Qiwei2 ; Chen, Liang2
发表期刊	IEICE ELECTRONICS EXPRESS
	2016-04-25
卷号	13 期号:8 页码:1-8
文章类型	Article
摘要	In aerospace environment, single event effect (SEE) will occur and single event transient (SET) current pulse will be induced in drain/source region of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) when high energy ion strikes semiconductor devices. The typical double exponential transient current model proposed for traditional technology is not suitable for ultra deep sub-micron technology devices. In this paper, a novel multi-dimensional double exponential transient current model is proposed based on our new understanding of ultra deep sub-micron radiation mechanism, which has been validated using Technology Computer Aided Design (TCAD) simulation. This model can be important basis for the searching of SEE at circuit level and can be transparently applied to evaluate the effectiveness and performance of hardening technique, thus shortening the developing cycle of integrated circuit intended to operate within aerospace environment.
关键词	Single Event Effect Ultra Deep Sub-micron Double Exponential Transient Current Model Multi-dimensional
WOS标题词	Science & Technology ; Technology
DOI	10.1587/elex.13.20160014
收录类别	SCI
语种	英语
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000377764100004
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ia.ac.cn/handle/173211/12046
专题	国家专用集成电路设计工程技术研究中心
作者单位	1.Univ Sci & Technol China, Sch Informat Sci & Technol, Hefei 230026, Peoples R China 2.Chinese Acad Sci, Inst Automat, Natl ASIC Design Engn Ctr, Beijing 100190, Peoples R China
第一作者单位	中国科学院自动化研究所
推荐引用方式 GB/T 7714	Wang, Jingqiu,Lin, Fujiang,Wang, Donglin,et al. Collection of charge in NMOS from single event effect[J]. IEICE ELECTRONICS EXPRESS,2016,13(8):1-8.
APA	Wang, Jingqiu.,Lin, Fujiang.,Wang, Donglin.,Song, Wenna.,Liu, Li.,...&Chen, Liang.(2016).Collection of charge in NMOS from single event effect.IEICE ELECTRONICS EXPRESS,13(8),1-8.
MLA	Wang, Jingqiu,et al."Collection of charge in NMOS from single event effect".IEICE ELECTRONICS EXPRESS 13.8(2016):1-8.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Collection of charge（2518KB）	期刊论文	作者接受稿	开放获取	CC BY-NC-SA	浏览